Intersubband Transition Lasers.

Device Physics of Intersubband Lasers

Terahertz Lasers Based on Intersubband Transitions

Semiconductor quantum wells are human-made quantum mechanical systems in which the energy levels can be designed and engineered to be of any value. Consequently, unipolar lasers based on intersubband transitions (electrons that make lasing transitions between subband levels within the conduction band) were proposed for long-wavelength sources as early as the 1970s. However, because of the great...

The Intersubband Approach to Si-based Lasers

Intersubband-transition-induced phase matching.

We suggest the use of the refractive-index changes associated with the intersubband transitions in quantum wells for phase matching in nonlinear materials. An improvement in the conversion efficiency of mid-IR second-harmonic generation by almost 2 orders of magnitude over non-phase-matched bulk GaAs is predicted. We also show that the linear phase contributions of intersubband transitions used...

Electron transport process in quantum cascade intersubband semiconductor lasers

Detailed self-consistent calculations have been performed of the electron transport and capture aspects of the dynamics of electrically pumped quantum cascade intersubband semiconductor lasers. Specific attention is given to the dependence of the characteristic carrier relaxation times on carrier temperature and density at different applied biases. We have found that the capture and intersubban...